Measuring a GaN transistor on the high side

Meaure Id, Vds, and Vsat on a GaN transiror to measure the high side power, energy and RdsOn.

We use the CS548 isolated channel oscilloscope to measure the high side current of a switching GaN transistor. The current is measured using a CS1201 isolated current digitizer and a CS1501 resistive shunt probe. The GaN transistor as it switches in about 4ns. We measure the GaN saturated on voltage using a CS1133 Vsat probe. Standard probes are used to measure Vds and the logic level driving the gate. We calculate the Power and Energy dissipated in the transistor, and the RdsOn.

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16 Channel Isolated Oscilloscope
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